X-FAB now offering SPAD and APD devices on 180nm process

June 20, 2019 //By Ally Winning
X-FAB Silicon Foundries has announced avalanche photodiode (APD) and single-photon avalanche diode (SPAD) products for low light applications.
X-FAB Silicon Foundries has announced avalanche photodiode (APD) and single-photon avalanche diode (SPAD) products for low light applications.

The devices are based on X-FAB’s 180nm high-voltage XH018 process. The new function block devices combine elevated performance parameters and straightforward integration. The APD features a strong linear gain figure, is able to scale from just ten to several hundred micrometer dimensions. The quenching circuit used in the SPAD results in under 15ns dead time – for higher bandwidths. Its low dark count rate (<100 counts/s/µm²) makes it less susceptible to thermal noise. Additionally, the high photon detection probability (PDP) of the SPAD helps a higher proportion of incident photons trigger an avalanche, and this is maintained across an extensive range of wavelengths (e.g. 40% at 400nm).

The X-FAB APD and SPAD is suitable for many different applications - including proximity sensing, LiDAR, time of flight (ToF), medical imaging (CT and PET) and scientific research. Their complacency to AEC-Q100 also makes them suitable for automotive systems. Low breakdown voltage (<20V) helps their incorporation onto customer dies. They are fully characterized and can be combined with other modules featured in the XH018 process. Models for optical and electrical simulation, along with a specific application note, help integration into circuitry quickly. They are supplied in a function block format, and a quenching reference circuit that fully demonstrates the SPAD’s capabilities is also available.

More information

www.xfab.com

https://www.xfab.com/technology/cmos/018-um-xh018/

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