The new family has two device classes, with the TXZxA+ advanced class MCUs fabricated in a 40 nm CMOS process technology. The MCUs offer either an Arm Cortex-M3 or a Cortex-M4 with FPU processor core. The second new class is the TXZxE+ entry class, which uses a 130nm CMOS process and uses an Arm Cortex-M0, Cortex-M3, or Cortex-M4 processor core.
The TXZxA+ class provides performance of up to 254 DMIPS at frequencies up to 200 MHz while dissipating around 30% lower dynamic power than Toshiba’s earlier generation 65nm devices. The line-up will be functionally aligned and pin-compatible to existing 65nm TXZ devices. Features include a built-in high-precision oscillator and pre-drivers. A single-supply regulator is integrated that operates without needing external capacitors. TXZxA+ is a scalable platform with modular IP using a common register map to ease software design and re-use. A broad package line-up with intra-family footprint compatibility makes PCB design easier.
The TXZxE+ entry class provides functionality for basic control applications. They are Toshiba’s first MCUs with a SONOS (silicon-oxide-nitride-oxide-silicon) memory, a non-volatile memory technology that has superior data retention and write endurance compared to conventional flash memory technology.
Toshiba’s TXZ+ MCU family will save energy by reducing its own power dissipation and also by providing smarter control of attached sensors and actuators. The devices’ improved performance and extended operating temperature range of up to +125°C will also make them suitable for a wide variety of applications.