Low RDS(on) MOSFETs target automotive/industrial applications

May 31, 2021 // By Jean-Pierre Joosting
 Low RDS(on) MOSFETs target automotive/industrial applications
MOSFETs come in the high-reliability LFPAK88 package and offer class-leading SOA and avalanche characteristics increase ruggedness and reliability.

Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the high-reliability LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are the lowest RDS(on) 40 V parts that Nexperia has ever produced and more importantly, they deliver power densities more than 50X greater than traditional D2PAK devices. Further, the devices also offer improved performance in both Avalanche and Linear mode, leading to increased ruggedness and reliability.

Neil Massey, Nexperia’s Product Marketing Manager comments: “The new 8- x 8-mm LFPAK88 MOSFETs combine the latest high performance superjunction silicon technology with our proven LFPAK copper clip technology, which is renowned for delivering significant electrical and thermal performance benefits. The resulting low RDS(on) enables us to pack more silicon in the package, improving power density and shrinking device footprint.”


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