Berlin-based Ferdinand-Braun-Institut (FBH) has recently put a sophisticated ion implanter system from High Voltage Engineering Europa B.V. into operation. The versatile tool extends the capabilities of FBH for in-house research and customer processes.
With three different ion sources and the ability to heat substrates, the implanter is ideally suited for the development of innovative semiconductor devices. Further, the system enables doping implantations of wide-bandgap semiconductors, whose outstanding material properties are to be used in future power electronics applications.
Ion implantation is one of the key processes in manufacturing microelectronic devices, which is used to introduce foreign atoms into semiconductor layers. In this process, charged particles (ions) are shot at semiconductor materials and thus introduced (implanted) into a material layer. With this key technology of the semiconductor industry, material properties can be modified in a targeted manner.
The novel ion implanter offers high implantation currents of up to 2 mA and covers acceleration voltages from 5 keV to 500 keV. This allows materials to be systematically modified even at high implantation doses within industry-compatible process times. A sputtering source can also be used to implant materials with very high melting points, such as the special metals tungsten, molybdenum, tantalum, and niobium. This opens up further technological possibilities.