Infineon, Panasonic accelerate development of 650 V GaN devices

September 02, 2021 // By Jean-Pierre Joosting
Infineon, Panasonic accelerate development of 650 V GaN devices
Gen2 will be developed as 650 V GaN HEMT and will allow for ease of use and provide an improved price-performance ratio for applications such as SMPS, renewables and motor drives.

Infineon Technologies AG and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650 V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.

For many designs, gallium nitride offers fundamental advantages over silicon. The outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs qualify GaN HEMTs for high-speed switching. The resulting power savings and total system cost reduction, operation at higher frequencies, improved power density, and overall system efficiency make GaN a very attractive choice for design engineers.

“In addition to the same high reliability standards as for Gen 1, with the next generation customers will benefit from even easier control of the transistor as well as a significantly improved cost position, thanks to moving to an 8-inch wafer manufacturing,” says Andreas Urschitz, President of Infineon’s Power and Sensor Systems Division.


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.