Imec shows optimized process flows for Ge-based devices: Page 2 of 2

June 12, 2019 //By Ally Winning
Image 1: Improved performance and reliability of the Ge nFinFET device. (Left:)
imec will report improved performance for Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices at the 2019 Symposia on VLSI Technology and Circuits.

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