Hybrid IGBTs with built-in SiC diode

July 20, 2021 // By Jean-Pierre Joosting
Hybrid IGBTs with built-in SiC diode
Ideal for automotive and industrial applications, these IGBTs achieve lower loss and power consumption while improving cost performance.

Qualified under the AEC-Q101 automotive reliability standard, the RGW60TS65CHR, RGW80TS65CHR, and RGW00TS65CHR hybrid IGBTs from ROHM feature an integrated 650 V SiC Schottky barrier diode. The RGWxx65C series devices are ideal for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEV). (Figure 1)

The RGWxx65C series utilizes ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly. Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in industrial and automotive applications.

Figure 1.

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