Gowin Semiconductor embeds 64 Mb HyperRAM™ DRAM from Winbond: Page 2 of 2

January 13, 2021 //By Jean-Pierre Joosting
Gowin Semiconductor embeds 64 Mb HyperRAM™ DRAM from Winbond
HyperRAM™ product offers attractive combination of low pin count, low power consumption and high data bandwidth in miniature KGD form factor.

The performance specifications of the the 64 Mb HyperRAM™ include maximum data bandwidth of 500MB/s. It also offers ultra-low power consumption in operating and hybrid sleep modes.

Jason Zhu, CEO of Gowin, said: ‘The problem which Gowin Semiconductor has solved with the GW1NSR4 is to pack a high-performance and low-power edge computing engine in a tiny package. The Winbond KGD format and HyperRAM™ memory technology are ideal for this, because the die can be embedded in the same package as the FPGA, eliminating the need for DRAM as an external component.

Winbond’s HyperRAM™ products are available for high-volume production in densities of 512 Mb, 256 Mb, 128 Mb, 64 Mb and 32 Mb.


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