Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3 and MasterGaN5 integrated power packages for applications up to 45 W and 150 W, respectively. Joining the MasterGaN1, MasterGaN2, and MasterGaN4, which target applications from 65 W to 400 W, the additions give extra flexibility to choose the optimum Gallium Nitride (GaN) device and driver when designing switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters.
The MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650 V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80% smaller than silicon-based designs as well as extremely robust and reliable.
The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225 mΩ and 450 mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450 mΩ Rds(on) for use in topologies such as LLC-resonant and Active Clamp Flyback.