The AS4C1G8D3LA is configured as 8 banks x 128M x 8 in a 78-ball FBGA package while the AS4C512M16D3LA is configured as 8 banks x 64M x 16 in a 96-ball FBGA.
Featuring a DDR architecture, the AS4C1G8D3LA and AS4C512M16D3LA provide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz. Operating from a single +1.35V power supply, with backward compatibility to 1.5V, the SDRAMs are optimized for main memory applications in laptops, desktops, servers, and embedded / industrial designs. The devices are available in commercial (0°C to +95°C), industrial (-40°C to +95°C), and automotive (-40°C to +105°C) temperature ranges. The AS4C1G8D3LA and AS4C512M16D3LA support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
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