The new devices combine Micron’s advanced DDR4 DRAM technology and SMART’s high-speed PCB designs. The combination of the two technologies significantly improves signal integrity, providing broader design margins even at the highest DDR4 bus speeds. NVDIMMs have seen broad adoption in applications that need “normal” memory operation at DRAM bus clock rates. SMART’s new NVDIMMs are also developed with Micron’s advanced 3D NAND technology to offer highly reliable memory persistence if the system crashes or there is a power outage, with minimal back-up and restore times.
“We are pleased that SMART is employing Micron’s DRAM and 3D NAND technologies in its newest leading-edge NVDIMM products to offer maximum reliability and performance,” stated Malcolm Humphrey, vice president of marketing of the Compute & Networking Business Unit at Micron. “Enterprises that need resilient memory and storage to ensure constant availability of mission-critical information will benefit from SMART’s NVDIMMs.”
The NVDIMMs operate much the same as DDR4 RDIMMs. They offer unlimited write endurance with integrated persistence capability. These traits creates allow efficient write acceleration and high-speed recovery capability. SMART NVDIMMs provide the full feature set currently defined by JEDEC standards. Additionally, AES-XTS 256 provides enhanced data protection. SMART also provides a wide variety of intelligent back-up power modules (BPM) in different form factors to provide temporary power during back-up operations.
SMART also offers full firmware and technical support to its customers for NVDIMM and BPM products. The company has a 10-year track record of designing, manufacturing and supporting NVDIMMs and BPMs. It has been a key contributor, along with other industry partners, in establishing the evolving NVDIMM ecosystem.