“By engineering MoS2 into a 2-D semiconducting-metallic phase junction, we built an atomically thin, ultrafast Schottky diode that simultaneously minimizes the series resistance and parasitic capacitance,” says first author and EECS postdoc Xu Zhang, who will soon join Carnegie Mellon University as an assistant professor.
Parasitic capacitance is an unavoidable situation in electronics where certain materials store a little electrical charge, which slows down the circuit. Lower capacitance, therefore, means increased rectifier speeds and higher operating frequencies. The parasitic capacitance of the researchers’ Schottky diode is an order of magnitude smaller than today’s state-of-the-art flexible rectifiers, so it is much faster at signal conversion and allows it to capture and convert up to 10 gigahertz of wireless signals.
“Such a design has allowed a fully flexible device that is fast enough to cover most of the radio-frequency bands used by our daily electronics, including Wi-Fi, Bluetooth, cellular LTE, and many others,” Zhang says.
The authors reported a maximum output efficiency of 40% for their device, depending on the input power of the Wi-Fi input. At the typical Wi-Fi power level, the power efficiency of the MoS2 rectifier is about 30 percent. For reference, today’s rectennas made from rigid, more expensive silicon or gallium arsenide achieve around 50 to 60 percent.