Application-specific MOSFETs for hot-swap

August 04, 2021 // By Jean-Pierre Joosting
Application-specific MOSFETs for hot-swap
Latest 80 V and 100 V MOSFETs increase SOA by 166% and slash PCB footprint by 80% boosting performance, reliability and reducing system cost.

Nexperia has announced new 80 V and 100 V application-specific MOSFETs (ASFETs) with enhanced SOA performance, targeting hot-swap and soft-start applications in 5G telecom systems and 48 V server environments and industrial equipment needing e-fuse and battery protection.

ASFETs are a new breed of MOSFET optimized for use in particular design scenarios. By focusing on specific parameters critical to an application, sometimes at the expense of others that are less important in the same design, new levels of performance can be achieved. The new hot-swap ASFETs use a combination of Nexperia’s latest silicon technology and copper-clip package construction to significantly strengthen the Safe Operating Area (SOA) and minimize PCB area.

Previously, MOSFETs have suffered from the Spirito effect, whereby the SOA performance drops off rapidly due to thermal instability at higher voltages. Nexperia’s rugged, enhanced SOA technology eliminates the ‘Spirito-knee’, increasing SOA by 166 % at 50 V when compared to previous generations in D2PAK.

Another important advancement is the inclusion of 125 °C SOA characteristics on the datasheet. Comments Mike Becker, Senior International Product Marketing Manager at Nexperia: “SOA is traditionally only specified at 25 °C, meaning designers have to derate for operation in hot environments. Our new hot-swap ASFETs include a 125 °C SOA specification, eliminating this time-consuming task and confirming Nexperia’s excellent performance even at elevated temperatures”.

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