650 V CoolSiC™ Hybrid IGBT offers superior efficiency

February 08, 2021 // By Jean-Pierre Joosting
650 V CoolSiC™ Hybrid IGBT offer superior efficiency
Combines key benefits of the 650 V TRENCHSTOP™ 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes.

Infineon Technologies AG has launched a 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage. The CoolSiC hybrid product family combines key benefits of the 650 V TRENCHSTOP™ 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes. With superior switching frequencies and reduced switching losses, the devices are especially suited for DC-DC power converters and power factor correction (PFC). These can typically be found in applications like battery charging infrastructure, energy storage, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS).

Due to a freewheeling SiC Schottky barrier diode co-packed with an IGBT, the CoolSiC Hybrid IGBTs perform with significantly reduced switching losses at almost unchanged dv/dt and di/dt values. They offer up to 60 percent reduction of E on and 30 percent reduction of E off compared to a standard silicon diode solution. Alternatively, the switching frequency can be increased at least by 40 percent with unchanged output power requirements. A higher switching frequency will allow reducing passive components size and thus lower bill-of-material cost. The Hybrid IGBTs can be used as a drop-in replacement for TRENCHSTOP 5 IGBTs allowing an efficiency improvement of 0.1 percent for each 10 kHz switching frequency without redesign efforts.


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