128GB UFS version 3 memory now sampling

January 23, 2019 //By Julien Happich
 128GB UFS version 3 memory now sampling
Toshiba Memory Europe GmbH has started sampling the 128GB version of the industry’s first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices.

The new line-up uses the company’s cutting-edge 96-layer BiCS FLASH 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.

UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device. With the introduction of UFS 3.0, JEDEC, the global leader in the development of standards for the microelectronics industry, has enhanced previous versions of the UFS standard to help product designers enable significant improvements in mobile devices and related applications. The new devices integrate 96-layer BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5x13mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management for simplified system development. Theoretical interface speed is up to 11.6 Gigabits per second per lane (x2 lanes = 23.2Gbps). Sequential read and write performance of the 512GB device are improved by approximately 70 percent and 80 percent, respectively, over previous generation 256GB Toshiba devices.

Toshiba Memory Europe GmbH - www.toshiba-memory.com

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