Webinar: Industrial PFC with silicon carbide MOSFETs – 30th Nov.

This webinar presents an optimized two-level three-phase 20 kW hardware prototype PFC (power-factor correction) design using 1kV SiC (silicon carbide) MOSFETs.

Timing for the presentation is 6 pm GMT / 19:00 CET.

In the session, the performance of this SiC-based AC/DC converter is compared against similarly rated AC/DC converter topologies with primary emphasis on the Vienna rectifier using SJ (superjunction) MOSFETs.

The content will include;

– AFE design using Wolfspeed SiC MOSFETs achieves high power density with a simple topology and control approach.

– When compared to Vienna Rectifier (650V devices), AFE design delivers up to 1% higher efficiency with similar BOM costs.

– SiC MOSFETs offer symmetrical third quadrant operation and predictable linear Coss behavior at high Fsw.

– When using SiC, designers can achieve higher efficiency and bi-directional power at no additional cost.

Registration for the webinar is here.