Webinar: Industrial PFC with silicon carbide MOSFETs – 30th Nov.
This webinar presents an optimized two-level three-phase 20 kW hardware prototype PFC (power-factor correction) design using 1kV SiC (silicon carbide) MOSFETs.
Timing for the presentation is 6 pm GMT / 19:00 CET.
In the session, the performance of this SiC-based AC/DC converter is compared against similarly rated AC/DC converter topologies with primary emphasis on the Vienna rectifier using SJ (superjunction) MOSFETs.
The content will include;
– AFE design using Wolfspeed SiC MOSFETs achieves high power density with a simple topology and control approach.
– When compared to Vienna Rectifier (650V devices), AFE design delivers up to 1% higher efficiency with similar BOM costs.
– SiC MOSFETs offer symmetrical third quadrant operation and predictable linear Coss behavior at high Fsw.
– When using SiC, designers can achieve higher efficiency and bi-directional power at no additional cost.
Registration for the webinar is here.