UFS embedded flash memory devices push performance

New Products |
By Jean-Pierre Joosting

KIOXIA Europe GmbH is sampling its latest generation of 256 and 512 GB Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Housed in 0.8- and 1.0-mm-high packages, the new products improve performance by 30% for random read and 40% for random write – making them thinner and faster than their predecessors. The latest KIOXIA UFS devices utilize the company’s most current, high-performance fifth-generation BiCS FLASH™ 3D flash memory and are targeted to a variety of mobile applications.

The broad set of power and space-conscious applications that utilize embedded flash memory continue to need higher performance and density, and UFS has increasingly been the solution of choice. From a total gigabyte perspective, UFS now accounts for the majority of the demand relative to e-MMC. According to Forward Insights, when combining overall UFS and e-MMC gigabyte demand worldwide, almost 70% of the demand this year is for UFS, and this will continue to grow.

“With the new Ver. 3.1 UFS our continued leadership in JEDEC standardization results in another boundaries breakthrough on performance and form factors in the area of embedded non-volatile memories,” noted Axel Stoermann, Vice President Memory Marketing & Engineering for KIOXIA Europe GmbH. “Consequent review and further development of KIOXIA’s BiCS FLASH 3D flash memory technology not only provides a new product range of random read and write speed in thinnest packaging formats, the new devices have the potential to be the preferred solution for a broad area of demanding industrial applications.”

Another advance, Host Performance Booster (HPB) Version 2.0 improves random read performance by utilizing the host side memory to store logical to physical translation tables. While HPB Version 1.0 only enables 4-kilobyte chunk size access, HPB Ver. 2.0 enables wider access – which can further boost random read performance.

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