Superjunction +FETs extend performance at 650V ratings

Superjunction +FETs extend performance at 650V ratings

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D3 Semiconductor (Addison, Texas), a new entrant into the power semiconductor sector, is offering 650V-rated superjunction MOSFETs in a range of package configurations; and is claiming figure-of-merit numbers ahead of other industry players.
By Graham Prophet

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The +FET line of 650V-rated superjunction MOSFETs are intended to proovide high-efficiency solutions for a range of hard-switched applications, including PFC boost and inverters used in telecom, enterprise computing, UPS and solar.

 

At launch, there are over 50 devices with 13 different RDS(ON) ratings ranging from 1Ω to 32 mΩ. Packages types include: traditional through-hole (TO-220/TO-220FP), surface-mount (DPAK/D2PAK) and advanced surface-mount (5×6/8×8) devices. For all package sizes and ratings, D3 Semiconductor’s +FET devices exhibit a Qg x RDS(ON) FOM (Figure of Merit) that is presented as among the highest available.

 

Smooth switching behaviour reduces switching noise and drives faster design cycles by lowering the need for snubber circuits. Their advantage of higher current-carrying capability per package type improves power supply density, which in turn enables the use of advanced surface-mount packages in higher power designs.

 

“In addition to the +FET’s excellent performance and reliability, our roadmap is changing the DNA of power devices by infusing mixed-signal functions into high-voltage switching devices,” said Tom Harrington, D3 Semi’s Chief Technology Officer.

 

Pricing in USD for an example 650V/80 mΩ +FET is $1.84 (1000).

 

A product table showing the initial +FET product line is at: https://www.d3semi.com/MOSFET-Overview

 

D3 Semiconductor; www.d3semi.com

 

 

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