SiC MOSFET modules enable downsizing, boost efficiency

New Products |
By Jean-Pierre Joosting

Toshiba Electronics Europe GmbH has introduced a compact but effective MOSFET module, the MG800FXF2YMS3, that incorporates 3300-V-rated dual-channel silicon carbide (SiC) MOSFET devices that are capable of supporting 800 A currents. Key applications for these high power density modules include industrial drives and motor control equipment, the power inverters for renewable energy generation sites, plus the converters/inverters needed for electric rail infrastructure.

Pivotal to the strong performance parameters attributed to the latest SiC MOSFET modules is the Toshiba’s proprietary packaging technology. The intelligent flexible package low voltage (iXPLV) housings employed in these modules rely on an advanced silver sintered internal bonding technology to enable elevated degrees of operational efficiency. Channel temperatures reaching as high as 175°C can be supported, while isolation up to 6000 VRMS is assured. Turn-on and turn-off switching losses are kept to 250 mJ and 240 mJ respectively, with stray inductance figures of just 12 nH typically being expected.


Linked Articles
eeNews Embedded