Sensitron and EPC collaborate on 350 V GaN intelligent power module
Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN intelligent power modules. By replacing traditional silicon FETs with EPC’s 350-V, EPC2050 GaN FET, Sensitron was able to reduce the size of their power module by 60 percent while also improving its already excellent junction-to-case thermal conduction.
The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 kHz. Rated at 20 A, the power module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10- x 0.70- x 0.14-inches or 2.80- x 1.78- x 0.36-cm) allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.
The SPG025N035P1B module uses the EPC2050, a 350 V rated GaN FET with 80 mΩ maximum RDS(on), 26 A peak current power in an extremely small chip-scale package that measures just 1.95- x 1.95-mm. The EPC2050 provides Sensitron with high efficiency due to its low switching losses, and high-power density due to its extremely small size. The EPC2050 is also ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.
“By using the ultra-small, high-power density EPC2050 GaN FET, we could design a 350 V half bridge module with higher efficiency and one third the size of alternative silicon solutions allowing us to capture very high-density applications,” commented Richard Locarni, Director of New Business Development, Sensitron.
Alex Lidow, EPC’s CEO, added, “This application is a great example of the real benefits that GaN brings. We have worked closely with Sensitron to find the best GaN FET to meet the design challenges that the power-density requirements of their module demands.”