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The chip, fabricated on 28nm FD-SOI process, integrates analog and digital functions (multiplexer, buffer, signal amplifier, oscillator, level converter) that represent future instrumentation needs for the quantum accelerator envisioned in CEA-Leti’s quantum initiative. Beyond the need to obtain reliable, entangled and coherent quantum bits, or qubits, on silicon, the goal of this work is ultimately to produce electronics capable of routing numerous signals to address a matrix of several hundred qubits. These results also demonstrate CEA-Leti’s know-how in cryogenic instrumentation in FD-SOI technology and can also be used for other non-silicon quantum devices such as superconducting qubits.

The results were presented in a paper, “A 110mK 295μW 28nm FD-SOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-chip Double Quantum Dot”, on Feb. 18 at ISSCC 2020 in San Francisco

More information at www.leti-cea.com

 


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