High-power GaN HEMT for L-band radar outputs
Delivering a minimum of 800W of pulsed power at 1.2 – 1.4 GHz and 50V operation with better than 65% drain efficiency, the CGHV14800 features high efficiency, high gain, and wide bandwidth capabilities, which suits it for L-Band radar amplifier applications, including: air traffic control (ATC) radar, penetration radar, antimissile system radar, target-tracking radar, and long-range surveillance radar.
Internally matched on input and output, the 900W, 50V GaN HEMT also exhibits 14 dB power gain and <0.3 dB pulsed amplitude droop. Wolfspeed’s CGHV14800 is supplied in a ceramic/metal flange package that can be shipped individually, or alongside or installed on a test board.
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices claim higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. In addition to L-Band radar power amplifiers, Wolfspeed says its GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.
See also; Infineon Technologies has announced its intention to acquire Wolfspeed from parent group Cree; see; Infineon to acquire Wolfspeed for SiC power and GaN RF technologies