Everspin starts volume production of STT-MRAM
The device has a perpendicular magnetic tunnel junction, claimed to be superior to the in-plane device. The 256Mbit STT-MRAM has an ST-DDR3 interface.
Everspin said it began shipping samples 256Mbit perpendicular spin-torque MRAM back in April 2016 (see Everspin samples 256Mbit MRAMs, 1Gbit coming).
“Our 256Mb STT-MRAM is the first ever perpendicular MTJ STT-MRAM entering mass production,” said Kevin Conley, CEO of Everspin, in a statement.
“The movement of discrete STT-MRAM to volume production is an important milestone on the way to enabling our risk production release of 22FDX eMRAM for Globalfoundries’ customers later this year, said Dave Eggleston, vice president of embedded memory at Globalfoundries, in the same statement.
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