MRAM-based MCU tape-out completed
The demonstration of the technology as a fully functioning design platform, was achieved through the incorporation of eVaderis’ software, system and memory IP in an ultra-low-power Beyond Semiconductor BA2X MCU.
The technology is based on the latest perpendicular, spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology, which was developed by Belgian research institute, imec. The BA2X MCU is designed for GLOBALFOUNDRIES’ 40-nm low-power CMOS production process and is capable of achieving non-volatile operation with high-speed read/write and low voltage. The MCU features 3 Mbit compiler-friendly memory distributed across the system to cover working memory, configuration, state retention, code execution and data storage.
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