With a footprint 60% smaller than a comparable circuit built from discrete components, the PWD13F60 can also boost end-application power density. By integrating four power MOSFETs, it presents an efficient alternative to other modules on the market that are typically dual-FET half-bridge or six-FET three-phase devices. Unlike either of these choices, only one PWD13F60 is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.
Built in ST’s high-voltage BCD6s-Offline fabrication process, the PWD13F60 integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving. The gate drivers are optimized for reliable switching and low EMI (electromagnetic interference). The SiP also features cross-conduction protection and under-voltage lockout, which helps further minimize footprint while ensuring system safety.
PWD13F60 can use a wide supply-voltage range, extending down to 6.5V. The SiP inputs can accept logic signals from 3.3V to 15V to ensure easy interfacing with microcontrollers (MCUs), digital signal processors (DSPs), or Hall sensors.
In a thermally efficient multi-island VFQFPN package, it is priced from $2.65 (1000).